Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OSHIMA HIROYUKI |
| 发表日期 | 1987-11-13 |
| 专利号 | JP1987261188A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser characterized by high light emitting efficiency and a low threshold current value, by simultaneously forming an active layer and the third and fourth clad layers in a planar state, by a chemical vapor growth method of organic metal, by which light is selectively emitted by using a mask. CONSTITUTION:The raw material gases of Hs, AsH3, H2Se, TMGa, TMAl and DEZn are introduced into a chamber 404 through mass-flow controllers (MFC). Then the gases are reacted, and thin films of GaAs, AlGaAs and the like are epitaxially grown. A susceptor 407 is heated to 600-800 deg.C by induction heating using an RF coil 405. Meanwhile, light is emitted from a light source 401 such as an excimer laser unit and projected on a substrate 406 through a mirror 2. A mask 403 is provided in-between. The light is projected on the arbitrary positions of the substrate in correspondence with the mask pattern, and epitaxial growing can be performed. Thus the semiconductor laser characterized by a small threshold current level and high light emitting efficiency can be formed stably at a high yield rate. |
| 公开日期 | 1987-11-13 |
| 申请日期 | 1986-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80246]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | OSHIMA HIROYUKI. Semiconductor laser and manufacture thereof. JP1987261188A. 1987-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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