Semiconductor element
文献类型：专利
| 作者 | FUKUSHIMA TORU; TAKABAYASHI TSUNEHISA; KOKAYU MIKIO |
| 发表日期 | 1990-09-12 |
| 专利号 | JP1990229484A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To enhance the quality and characteristics reliability and to improve the yield of products by appropriately determining electrical property (resistance) of a current constricting layer in relation to an electrode metal layer. CONSTITUTION:A mesa-type InGaAsP contact layer 14 is formed in the central region of the surface of an InP clad layer 13, and an N-type InP (or Fe-doped InP or non-doped InP) buried layer 15 is provided around the contact layer 14. The N-type InP buried layer 15 is covered with an insulating film 16 of an amorphous dielectric such as SiNx, SiO2 or amorphous Si. An opening at the center of the amorphous insulating film 16 provides a first current constricting window 17 while the part surrounded by the buried layer 15 provides a second current constricting window 18. In relation therebetween, the first current constricting window 17 has a larger window area than that of the second current constricting window 18. |
| 公开日期 | 1990-09-12 |
| 申请日期 | 1989-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80250]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | FUKUSHIMA TORU,TAKABAYASHI TSUNEHISA,KOKAYU MIKIO. Semiconductor element. JP1990229484A. 1990-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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