Semiconductor laser
文献类型：专利
| 作者 | OSHIMA MASAAKI; TSURUTA TORU; IDOTA TAKESHI |
| 发表日期 | 1987-10-29 |
| 专利号 | JP1987248281A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To easily obtain a single-vertical-mode laser, by causing a part of an active layer to make contact with air or a dielectric film so as to change the refractive index of this part. CONSTITUTION:A buffer layer 2, current blocking layers 3 and 4 and a mask layer 5 are formed on an N-type InP substrate After a 5 mum wide channel groove is formed by etching the structure, an N-type clad layer 6, an active layer 7, a P-type clad layer 8, a cap layer 9 and electrodes 10 and 11 are formed thereon, The layers 8, 9 and 10 are etched in a width of 1mum at a position spaced by predetermined distances L1 and L2 as measured from the end faces of the cleaved structure, so that a part of the active layer 7 is exposed. The refractive index of the exposed part of the active layer 7 is thereby changed effectively to provide an internal reflection face. Thus, a laser oscillating stably in a single vertical mode can be obtained. In this manner, an advantageous laser can be obtained easily through simple manufacturing processes only by etching a part of the active layer corresponding to the internal reflection face so as to expose the same. A dielectric film may be deposited on the exposed part 14. |
| 公开日期 | 1987-10-29 |
| 申请日期 | 1986-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80254]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OSHIMA MASAAKI,TSURUTA TORU,IDOTA TAKESHI. Semiconductor laser. JP1987248281A. 1987-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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