Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | KAMIJIYOU TAKESHI; USHIKUBO TAKASHI; HASHIMOTO AKIHIRO; KOBAYASHI MASAO |
| 发表日期 | 1985-11-20 |
| 专利号 | JP1985233879A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To contrive the reduction of internal strain generating by impurity doping by a method wherein the growing temperature is restricted to a specific range of temperature in growing an Si-doped GaAs active layer on a GaAs substrate. CONSTITUTION:An n type AlGaAs layer 2 is grown on an n type GaAs substrate 1, and the Si-doped GaAs active layer 3 is grown on this layer 2 at a temperature within a range of 840-940 deg.C. Thereafter, a p type AlGaAs layer 4 is grown on the layer 3. This layer 3 is doped with Si at a high concentration in order to obtain a desired band of infrared wavelength. However, the doping of high concentration impurities into a semiconductor region produces strains in a crystal lattice on account of the difference in size between the atom constituting the mother crystal and the impurity atom. A growing temperature of 840-940 deg.C can be used as a condition for the epitaxial growth of high concentration SiGa in order to inhibit said strain. |
| 公开日期 | 1985-11-20 |
| 申请日期 | 1984-05-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80256]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | KAMIJIYOU TAKESHI,USHIKUBO TAKASHI,HASHIMOTO AKIHIRO,et al. Manufacture of semiconductor light emitting element. JP1985233879A. 1985-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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