Light emitting semiconductor device
文献类型：专利
| 作者 | MORI MITSUHIRO; ONO YUUICHI; ITOU KAZUHIRO; KAWADA MASAHIKO; NAKAMURA HITOSHI; KURATA KAZUHIRO |
| 发表日期 | 1984-10-25 |
| 专利号 | JP1984188182A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting semiconductor device |
| 英文摘要 | PURPOSE:To suppress the current extension of a light emission and to reduce the thermal resistance of an element by providing a low resistance layer which is larger in area of the portion opposed to an active layer than the semiconductor portion which is contacted with a substrate side electrode. CONSTITUTION:An N type active layer (N or P type), P type and N type crystalline layers 22, 23, 24, 25 are continuously formed on the crystal layer (N type conductive layer) 21 having a light transmitting wide fobidden band width. A P type layer 26 is formed by diffusing Zn or Cd, and a P type 261 is formed by a lateral abnormal diffusion. P type of substrate side and N type ohmic electrodes 271, 272 of light emitting side, internal light emitting window 28 are formed, and an optical fiber is mounted at this portion. A current is flowed through 26 to the layer 23, and the 231 becomes the light emitting region. Since the electrode 271 has a large contact region, the contacting resistance can be reduced. When the light emitting diode is energized forwardly, the P-N junction is biased reversely, and the extension of the current can be prevented without using an insulating film. |
| 公开日期 | 1984-10-25 |
| 申请日期 | 1984-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80259]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | MORI MITSUHIRO,ONO YUUICHI,ITOU KAZUHIRO,et al. Light emitting semiconductor device. JP1984188182A. 1984-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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