Semiconductor laser
文献类型：专利
| 作者 | SASAI YOICHI; ONAKA SEIJI; NAKAO ICHIRO; SHIBATA ATSUSHI |
| 发表日期 | 1987-04-02 |
| 专利号 | JP1987072191A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser of a BH structure with a flat epitaxial surface by a method wherein the 2nd cladding layer on an active layer and the active layer are formed into a normal mesa shape by mesa etching and the active layer is scraped to a required stripe width by side etching and buried layers are successively formed on the mesa surface. CONSTITUTION:An N-type InP buffer layer 2, an undoped active layer 3 and a P-type InP cladding layer 4 are formed on an N-type InP substrate The P-type InP cladding layer 4 is formed into a normal mesa shape. The stripe width of the active layer 3 is controlled by side etching. After such etching processes, a P-type InP buried layer 5, an N-type InP buried layer 6 and a P-type InGaAsP contact layer 7 are successively made to grow. The width W of the top surface of the mesa of the P-type Inp cladding layer 4 is made to be less than about 4mum. With this constitution, the buried layers 5 and 6 are not made to grow on the top surface of the mesa of the P-type InP cladding layer 4 or do not climb up along the side surface of the cladding layer 4 nd grow flat so that the P-type InGaAsP contact layer 7 can be sufficiently flat. |
| 公开日期 | 1987-04-02 |
| 申请日期 | 1985-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80267]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SASAI YOICHI,ONAKA SEIJI,NAKAO ICHIRO,et al. Semiconductor laser. JP1987072191A. 1987-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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