Manufacture of semiconductor laser
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078272A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable II-VI compound semiconductor to be burried with excellent reproducibility and flatness by burying the side and top of a light guide path with II-VI compound semiconductor, and applying resist and then removing the semiconductor by RIBE. CONSTITUTION:An n-GaAs buffer layer 102, an n-Al0.5Ga0.5As clad layer 103, an Al0.15Ga0.85As active layer 104, a p-Al0.5Ga0.5As clad layer 105, and a p-GaAs contact layer 106 are stacked in order on an n-GaAs substrate 101 so as to form a substrate which has DH structure. The substrate is etched down to the middle of the layer 105, using the etching mask 107 of resist, so as to form a rib. Next, ZnSe 108 is grown to the height same as the rib. A resist layer 109 is applied, and is etched by RIBE, and remaining resist 107 is removed so as to flatten the surface. Thence, a P type electrode 110 and an N type electrode 110 are formed. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80270]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Manufacture of semiconductor laser. JP1991078272A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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