Semiconductor element
文献类型：专利
| 作者 | SUGAWARA HIDETO; OBA YASUO; KOKUBU YOSHIHIRO |
| 发表日期 | 1989-09-26 |
| 专利号 | JP1989241190A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To reduce an operating voltage, by establishing an intermediate band gap layer in a specific carrier density between a clad layer and a contact layer. CONSTITUTION:A p-InGaAlP intermediate band gap layer 59 and a p-GaAs contact layer 60 are deposited on a clad layer 58. In other words, between the clad layer 58 having a large band gap and the contact layer 60 having a small band gap, the intermediate band gap layer 59 is established which has a band gap of an intermediate value between the two and has a high carrier density of 5X10cm or more but 1X10cm or less. By this method, a voltage drop is reduced on an interface between the clad layer 13 and the contact layer 14, resulting in reduction of an operating voltage. |
| 公开日期 | 1989-09-26 |
| 申请日期 | 1988-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80276]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SUGAWARA HIDETO,OBA YASUO,KOKUBU YOSHIHIRO. Semiconductor element. JP1989241190A. 1989-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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