Semiconductor laser device
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO |
| 发表日期 | 1991-04-26 |
| 专利号 | JP1991101286A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce noise of self-excited oscillation relatively easily by providing a second conductivity type upper clad layer with a ridge part which is thick on a first conductivity type semiconductor substrate and by forming a second conductivity type contact layer which is narrower than the width of the ridge part only at the top part of the ridge part of the upper clad layer. CONSTITUTION:A lower clad layer 2, an activation layer 3, an upper clad layer 4, and a contact layer 6 are allowed to grow on a substrate 1 in sequence. Then, after forming a stripe-shaped insulating film, for example an SiO2 film 9 on the surface of a contact layer 6, one part of the contact layer 6 and the upper clad layer 4 is removed by etching with this SiO2 film 9 as a mask. Then, only GaAs of the contact layer 6 is etched and an etchant where no AlGaAs of the upper clad layer 4 is etched is used for sandwiching only the contact layer 6, thus narrowing the width of the contact layer 6 to a desired value. Elements thus produced generates self-excited oscillating, thus achieving an improved low noise characteristic with small return light induction noise. |
| 公开日期 | 1991-04-26 |
| 申请日期 | 1989-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80279]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO. Semiconductor laser device. JP1991101286A. 1991-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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