Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | MORINAGA MOTOYASU; FURUYAMA HIDETO; MOGI NAOTO |
| 发表日期 | 1989-07-24 |
| 专利号 | JP1989184975A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:Not only to improve the controllabvility of an active layer and a buried layer in width but also restrain a large stress from generating by a method wherein the side of the active layer is removed through a selective etching to make the central part of the active layer, which is protected against the etching by a pair of stripe-like regions, an active region which is contributory to the light emission. CONSTITUTION:An n-type InP buffer layer 11 (3mum or so in thickness) is laminated on an n-type InP substrate 10. Next, a GaInAs active layer 12 is laminated thereon and the active layer 12 is selectively etched to form a pair of stripes 20 which make the active layer 12 separate into a central active layer 12a and side active layers 12b. In this process, the shape of the stripes 20 is so formed as to make a buried region gradually larger in width near and toward the end face. And, a P-type InP clad layer 13 and a P-type GaInAsP cap layer are laminated to form a mesa 19. In this process, buried layers 13a, which sandwich the active region 12a formed in one piece with the P-type InP clad layer 13 in between them, are formed at the pair of stripes 20. Next, the side active layers 12b are removed through an etching. |
| 公开日期 | 1989-07-24 |
| 申请日期 | 1988-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80301]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MORINAGA MOTOYASU,FURUYAMA HIDETO,MOGI NAOTO. Semiconductor device and manufacture thereof. JP1989184975A. 1989-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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