Semiconductor laser
文献类型：专利
| 作者 | HIRAYAMA NORIYUKI; OOSHIMA MASAAKI; TAKENAKA NAOKI; KINO YUKIHIRO |
| 发表日期 | 1985-08-28 |
| 专利号 | JP1985165781A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a preferable sole longitudinal mode oscillation by providing a neck having a reflecting surface parallel to a resonator to perpendicularly reflect part of a laser light in a striped active layer substantially at the center of the striped active layer. CONSTITUTION:An N type InP clad layer 2, an N type InGaAsP active layer 3, a P type InP clad layer 4, and a P type InGaAsP cap layer 5 are continuously grown on an N type InP substrate Then, a striped mesa structure having a neck 10 having a surface parallel to a resonator surface is formed. Then, a P type InP layer 6, an N type InP layer 7 are grown as a current blocking layer. Part of the laser light in the layer 3 is repeatedly reflected on the resonator surface 11 of the both ends of the resonator by the neck 10 of the width W2 ( |
| 公开日期 | 1985-08-28 |
| 申请日期 | 1984-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80314]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | HIRAYAMA NORIYUKI,OOSHIMA MASAAKI,TAKENAKA NAOKI,et al. Semiconductor laser. JP1985165781A. 1985-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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