Semiconductor laser device
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145781A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device high in yield and uniform in characteristics by a method wherein two comparatively narrow grooves are provided to both the sides of a ridge-like stripe through etching. CONSTITUTION:A stripe groove 9a 5mum or so in width is formed through etching using insulating films 8 and 8a provided with stripe openings as a mask. In this case, the etched surface is very small in an area ratio, so that etching can be carried out stable in speed and excellent in reproducibility and an upper clad layer left unremoved through etching can be reduced in dispersion of thickness. In succession, the insulating film 8a is removed, and a current block layer 6 is formed through the insulating film 8 as a mask for selective growth. As the upper clad layer which influences a semiconductor laser in characteristics is uniform in thickness, the semiconductor lasers uniform in characteristics can be obtained high in yield. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80320]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO. Semiconductor laser device. JP1991145781A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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