Semiconductor laser device
文献类型：专利
| 作者 | UOMI KAZUHISA; KAYANE NAOKI; NAKATSUKA SHINICHI; OTOSHI SO; KAJIMURA TAKASHI |
| 发表日期 | 1986-11-14 |
| 专利号 | JP1986256781A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To achieve low aberration, high output and low noises, by setting the concentration of Se of impurities in an N-type GaAlAs clad layer in a quantum well semiconductor laser at a specified value or more. CONSTITUTION:On an N-type GaAlAs substrate crystal 1, an N-type GaAlAs clad layer 2, a multiplex quantum well active layer 3, a P-type GaAlAs clad layer 4 and an N-type GaAs current narrowing layer 5 are sequentially formed. Then, a groove stripe, by which the surface of the layer 4 is exposed, is formed. Thereafter, a P-type GaAs clad layer 6 and a P-type GaAs cap layer 7 are formed. At this time, the impurities in the layer 2 comprise Se, and the concen tration of the impurities is 1X10(cm) or more. Under these conditions, the waveguide structure becomes a refractive index waveguide type. Low aberration is obtained, and the lateral mode at the time of high output operation can be stabilized. |
| 公开日期 | 1986-11-14 |
| 申请日期 | 1985-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80322]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,KAYANE NAOKI,NAKATSUKA SHINICHI,et al. Semiconductor laser device. JP1986256781A. 1986-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。