Manufacture of semiconductor laser
文献类型：专利
| 作者 | KAGAWA HITOSHI; HATTORI AKIRA |
| 发表日期 | 1989-07-20 |
| 专利号 | JP1989183185A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a window layer having a high quality in a simple process in a wafer state by continuously forming a first conductivity type first clad layer, an active layer, a second conductivity type second clad layer and a high resistance value window layer on a first conductivity type substrate in the same device. CONSTITUTION:A molecular beam 11 is radiated by a mask jig 12, and a first clad layer 2, an active layer 3 and a second clad layer 4 are selectively grown in a band state on a substrate Then, after a window layer 5 is grown by a mask jig 13, a current block layer 6 is grown on the whole face of the wafer by removing the jig 13. After the above process is all continuously conducted in the same crystal growing device, a current narrowing groove 10 is formed by etching in a resonator direction, and a contact layer is grown by a crystal growing method, such as LPE method or the like. Thus, a boundary between the layer 5 and an active unit is not contaminated in a forming step, a window layer having crystal of high quality can be formed in a wafer state, and the process is simplified. |
| 公开日期 | 1989-07-20 |
| 申请日期 | 1988-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,HATTORI AKIRA. Manufacture of semiconductor laser. JP1989183185A. 1989-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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