Semiconductor laser element
文献类型：专利
| 作者 | TANAKA TOSHIAKI; KONO TOSHIHIRO; KAJIMURA TAKASHI |
| 发表日期 | 1991-04-19 |
| 专利号 | JP1991094490A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain high output and low noise characteristics by burying a ridge waveguide strip with a current narrowing layer used also as a light absorption layer, reducing the current narrowing width smaller than the optical waveguide width, and regulating the height of the stripe. CONSTITUTION:Energy band gap of upper and lower optical waveguides 5 and 3 is increased larger than that of an active layer 4, and the layer 4 is formed in a single or multiple quantum wall structure having a thickness of 10-30nm of electron de Broglie wavelength or less and at least one quantum well layer. Further, the thickness of the film at the part not formed with the ridge waveguide stripe 5' of the upper optical waveguide is controlled to set the difference of the effective refractive indexes between a region under the stripe 5' and the remaining region in the layer 4 in a range of 8X10-5X10. Thus, high output characteristic for obtaining a light output or more necessary for writing and erasing a memory and low noise characteristic of the case in which relative noise intensity generates a returning light can be simultaneously satisfied by one element. |
| 公开日期 | 1991-04-19 |
| 申请日期 | 1989-01-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80336]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,KONO TOSHIHIRO,KAJIMURA TAKASHI. Semiconductor laser element. JP1991094490A. 1991-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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