Semiconductor light emitting device
文献类型：专利
| 作者 | KINOSHITA HIDEAKI; MATSUURA NOBUYUKI |
| 发表日期 | 1987-10-26 |
| 专利号 | JP1987245689A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To relieve the distortion due to the stress on a double stereo structure by a method wherein a buffer layer with the same conductivity type as that of a clad layer and the lattice constant between the clad layer and the substrate is provided between the substrate and the clad layer on the same side as that of the substrate opposing to the active layers. CONSTITUTION:An N type GaAs layer 2, an N type Al0.3Ga0.7As buffer 23, an N type Al0.45Ga0.55As clad 4 are laminated on an N type GaAs substrate 1 while the mixed crystal ratio of layer 23 is made less than that of the layer 4 to relieve the stress distortion in the grown layer formed on the upper part. First, an active layer AlyGa1-7As(undoped) 5 with mixed ratio y =0-0.15,a P type Al0.45Ga0.55As clad 6 and an N type Al0.3Ga0.7 As current strangulation layer 28 are laminated and then the layer 28 is etched to make a strip-groove 7. Second, a P type Al0.45Ga0.55As 9, a P type GaAs connecting layer 10 are laminated and then a Cr-Au electrode 11, an Au-Ge electrode 12 are formed. In such a constitution, the lattice alignment between substrate side clad and active layer can be improved to relieve the stress distortion so that in the active layers laminated in upper part, the lattice defect due to the stress distortion may be relieved to improve the luminescent efficiency and other characteristics. |
| 公开日期 | 1987-10-26 |
| 申请日期 | 1986-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80343]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | KINOSHITA HIDEAKI,MATSUURA NOBUYUKI. Semiconductor light emitting device. JP1987245689A. 1987-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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