半導体レーザの製造方法
文献类型：专利
| 作者 | ▲崎▼山 肇; 田中 治夫; 虫上 雅人 |
| 发表日期 | 1994-07-27 |
| 专利号 | JP1994056911B2 |
| 著作权人 | ローム株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To reduce a forward voltage by a method wherein when a semiconductor laser is formed using a molecular beam epitaxial device, a growth process is divided into a first process for growing a first upper clad layer and other layers and a second process for growing a second upper clad layer and the carrier concentration in the second upper clad layer is made high in the second process. CONSTITUTION:An N-type AlxGa1-xAs (x=0.6) lower clad layer 3, an AlxGa1-xAs (x=0.15) active layer 4, a P-type AlxGa1-xAs (x=0.6) first upper clad layer 5, an N-type GaAs photo absorption layer 6 and an N-type AlxGa1-xAs (x=0.15) evaporation preventive layer 7 are laminated in this order on an N-type GaAs substrate 2. After that, the substrate 2 is taken out outside, a striped groove 9 to intrude into the layer 6 is formed and a second upper clad layer 10 is adhered on the whole surface including this groove 9, but at this time, the layer 10 is formed as a P AlyGa1-yAs (y in the composition of Al=0.6) layer and the carrier concentration in the layer 10 is set higher by one order of magnitude than that in the layer 5. That is, the concentration of the layer 10 is set in a concentration of 3X10 to the concentration of 3X10 of the layer 5. |
| 公开日期 | 1994-07-27 |
| 申请日期 | 1989-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80345]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ローム株式会社 |
| 推荐引用方式 GB/T 7714 | ▲崎▼山 肇,田中 治夫,虫上 雅人. 半導体レーザの製造方法. JP1994056911B2. 1994-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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