Semiconductor laser device
文献类型：专利
| 作者 | KAWADA SEIJI |
| 发表日期 | 1990-07-03 |
| 专利号 | JP1990172288A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent cavity formation and other abnormal growth at the time of regrowth and reduce the element resistance by forming a second conductivity type GaInP layer having a specified thickness on a mesa structure, and forming a GaAs layer or a GaInP layer on the part except the upper surface of at least the GaInP layer. CONSTITUTION:Between an Al0.5In0.5P clad layer 4 and a GaAs cap layer 6 in a mesa part where current flows, a GaInP layer 5 having band gap energy between the above two layers 4 and 6 is inserted, so that the mesa part is divided into two spikes of small energy spike. When the thickness of the GaInP layer 5 is made equal to or less than 100Angstrom , a eaves like shape are not generated by etching from the rear at the time of forming a mesa stripe. Even if the eaves like shape generates, it is so small that the superior regrowth is obtained. Thereby, the generation of cavities and other abnormal growth are not caused and the element resistance can be reduced. |
| 公开日期 | 1990-07-03 |
| 申请日期 | 1988-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80349]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI. Semiconductor laser device. JP1990172288A. 1990-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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