Semiconductor laser device
文献类型：专利
| 作者 | OBE ISAO; TODOROKI SATORU |
| 发表日期 | 1986-10-21 |
| 专利号 | JP1986236182A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To keep high reliability even in the case of large output and improve the yield, by installing on the end surface a semiconductor region whose band gap is larger than that of the active layer. CONSTITUTION:The N-Ga1-xAlxAs clad layer 2, the Ga1-yAlyAs active layer 3, the P-Ga1-zAlzAs clad layer 4, and the N-GaAs cap layer 5 are continuously laminated on the N-GaAs substrate Through the mask 6, the portion from the end surface to the substrate 1 is eliminated by etching. The semi-insulative Ga1-fAlfAs layer 7 whose band gap is larger than that of the active layer 3 is buried in the etched portion. After the mask 6 for etching is eliminated, the diffusion layer 8 of specified width is formed to the depth reaching the clad layer 4 through the cap layer 5, and then the electrode 9 is formed. |
| 公开日期 | 1986-10-21 |
| 申请日期 | 1985-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80363]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OBE ISAO,TODOROKI SATORU. Semiconductor laser device. JP1986236182A. 1986-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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