Semiconductor laser device
文献类型：专利
| 作者 | TANAKA TOSHIO; IKUWA YOSHITO; KUME ICHIRO; TAKAMIYA SABURO |
| 发表日期 | 1986-11-27 |
| 专利号 | JP1986268089A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize a radiation pattern on laser oscillation up to the state of injection of high currents from the state of injection of low currents, and to improve the injection efficiency of carriers to an active region by holding the active region from the left and right directions by a first conduction type semiconductor layer and a second conduction type semiconductor layer. CONSTITUTION:An active region 12 is held by semiconductor layers such as an N-type AlGaAs layer 15 and a P-type AlGaAs layer 16, and the difference of refractive indices in the horizontal direction is increased and symmetrized bilaterally, thus stabilizing a radiation pattern on laser oscillation up to the state of injection of high currents from the state of injection of low currents. The active region 12 is surrounded by high-resistance AlGaAs clad layers 13, 14 having wide forbidden band width, thus improving the injection efficiency of carriers while also reducing threshold current density. |
| 公开日期 | 1986-11-27 |
| 申请日期 | 1985-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80365]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,IKUWA YOSHITO,KUME ICHIRO,et al. Semiconductor laser device. JP1986268089A. 1986-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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