Semiconductor laser device
文献类型：专利
| 作者 | SASAKI YOSHIMITSU; KAJIMURA TAKASHI |
| 发表日期 | 1985-06-04 |
| 专利号 | JP1985100492A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the electrical and optical characteristics, to improve the lifetime at the high output operation time and to enable to produce a monitoring light by setting a high reflectivity at one side of a light emitting output end face having a dielectric film and a low reflectivity at the other side and the output ratio to a specific range. CONSTITUTION:The reflectivities of the both end faces are regulated so that the ratio P2/P1 of the light output P1 from one side end face of a semiconductor laser device 11 having dielectric films 1-3 on the both end faces for producing the light output and the light output P2 from the other end face falls within a range of 0.05-0.200. A semiconductor laser element 11 is set in a sputtering unit, SiO2 is used as a target, and the first dielectric film SiO2 (having refractive index n1=45) 1 is coated in a thickness of lambda/6n1 on one side end face. Then, the second dielectric film SiO2 (having refractive index n2=45) 2 is coated in a thickness of lambda/4n2 on the other end face. Then, the target is switched to Si, the aqueous film containing amorphous Si (having refractive index n3=3.3) 3 of the third dielectric film is coated in a thickness of lambda/4n3, thereby obtaining P2/P1=0. |
| 公开日期 | 1985-06-04 |
| 申请日期 | 1983-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80371]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,KAJIMURA TAKASHI. Semiconductor laser device. JP1985100492A. 1985-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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