Semiconductor laser
文献类型：专利
| 作者 | ENDO KENJI |
| 发表日期 | 1992-01-13 |
| 专利号 | JP1992007886A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a long life semiconductor laser which are not affected by the loss and the like of free carrier absorption and the like, by positioning a P-N junction in a first conductivity type clad layer, on the element end surface. CONSTITUTION:On an N-type GaAs substrate 1, an N-type AlGaAs clad layer 2 and a P-type AlGaAs clad layer 4 are formed by interposing an AlGaAs active layer 3. Further a current constriction structure using a current block layer 6 of N type GaAs is arranged, and a P-type region 10 is formed in the active layer 3 and the clad layers 2, 4 in the vicinity of an element end surface 9. Since a P-N junction is positioned in the N-type clad layer 2 whose forbidden bandwidth is larger than the active layer, the carrier injected into the P-N junction at the time of operation is reduced. Thereby the growth speed of crystal defect on the element end surface can be remarkably restrained, and the reliability of a semiconductor laser can be largely improved. |
| 公开日期 | 1992-01-13 |
| 申请日期 | 1990-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80374]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | ENDO KENJI. Semiconductor laser. JP1992007886A. 1992-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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