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文献类型：专利
| 作者 | MUROTANI TOSHIO; ISHII JUN; OOMURA ETSUJI |
| 发表日期 | 1984-06-16 |
| 专利号 | JP1984025399B2 |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having long lifetime with low oscillation threshold value by forming a multilayer of semiconductor layer by epitaxial growth in a groove formed on a substrate and forming an active region by a selective melt- back process. CONSTITUTION:A groove 15 is formed on the main surface of an N type InP substrate 1, a resist 16 is removed, and N type InP layer 7, N type InGaAsP layer 2, P type InP layer 3 are epitaxially grown. then, it is melt back in In solution containing unsaturated P. The layers 3, and then 2 are dissolved, and while the InGaAsP is dissolving, the Ga density of the In solution is increased, and N type InP is difficult to be dissolved, and the melt back can be stopped at the position designated by a broken line 10. Thereafter, the P type InP layer 8, the P type InGaAsP layer 9 are grown, an insulating film 11, and electrodes 20, 21 are formed, and there can be formed a buried hetero junction type semiconductor laser. |
| 公开日期 | 1984-06-16 |
| 申请日期 | 1979-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80383]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MUROTANI TOSHIO,ISHII JUN,OOMURA ETSUJI. -. JP1984025399B2. 1984-06-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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