Semiconductor light emitting device
文献类型：专利
| 作者 | KOTAKI YUJI |
| 发表日期 | 1988-11-11 |
| 专利号 | JP1988274192A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To generate narrow beam width laser light by using a long external waveguide by providing a loss compensating unit which has an active layer for the external waveguide and by compensating the loss of light of the external waveguide by the loss compensating unit. CONSTITUTION:In a semiconductor light emitting device provided with a DFB laser unit 3 which emits single-wavelength laser light by pouring an active current Ia in the first active layer 1 and by selecting the light within a spectral width emitted from the first active layer 1 by using a diffraction grating 2 and an external waveguide 5 which makes the beam width of the laser light emitted from the DFB laser unit 3 narrow and is provided with a high reflecting mirror 4 on one end, a loss compensating unit 7 which provides the second active layer 6 for the above-mentioned external waveguide 5 is provided and the loss compensating unit 7 compensates the loss of light generated in the above-mentioned external waveguide 5. This semiconductor light emitting device can obtain the laser light wherein the beam width is made far narrower than that obtained by a conventional semiconductor light emitting device. |
| 公开日期 | 1988-11-11 |
| 申请日期 | 1987-05-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80397]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KOTAKI YUJI. Semiconductor light emitting device. JP1988274192A. 1988-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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