Manufacture of semiconductor device
文献类型：专利
| 作者 | KONUMA TAKESHI |
| 发表日期 | 1984-03-26 |
| 专利号 | JP1984051585A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To optimize the carrier-concentration distribution of an FET, and to manufacture an element easily by forming desired impurity-concentration distribution in the desired region of a semi-insulating substrate and forming a light- emitting or light-receiving region in the desired region. CONSTITUTION:Si ions are implanted selectively to the semi-insulating GaAs substrate 11, and a high-concentration N type GaAs layer 12 and an N type GaAs layer 13 are formed through heat treatment. Only a laser forming region is exposed and other sections except an exposed section 14' are protected by an insulating film 14, and an N type Ga1-xAlxAs (x=0.4) 15 to which Th is added, GaAs 16 not added in 0.2mum, P type Ga1-xAlxAs (x=0.4) 17 to which Ge is added and P type GaAs 18 to which Ge is added are formed by using a molecular beam epitaxy method. A P type electrode 20 consisting of Au-Zn is formed to P type GaAs 18 as a laser section, polycrystalline GaAs and GaAlAs are removed, and the insulating film 14 is exposed. Windows are bored to the insulating film 14, and a source electrode 21 using an Au-Ge alloy, a drain electrode 22 and a gate electrode 23 using an Al metal are formed. |
| 公开日期 | 1984-03-26 |
| 申请日期 | 1982-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80404]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | KONUMA TAKESHI. Manufacture of semiconductor device. JP1984051585A. 1984-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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