Semiconductor laser element
文献类型：专利
| 作者 | HANEDA MAKOTO |
| 发表日期 | 1986-09-24 |
| 专利号 | JP1986214591A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element whose leakage current, threshold current and driving current are small and which has excellent temperature characteristics and a long life, by a method wherein an auxiliary electrode is provided on a cap layer is applied between a cladding layer and the buried layer and between an ohmic contact layer and the buried layer when the laser emits light. CONSTITUTION:A stripe shape multiple growing layer, which is constituted by an N-type InP buffer layer 2, an InGaAsP activation layer 3, a P-type InP cladding layer 4 and a P-type InGaAsP cap layer 5, is formed on a main surface of an N-type InP substrate Both sides of the stripe are filled with laminated P-type InP blocking layers 6, N-type InP buried layers 7 and cap layers 8. A P-type ohmic contact layer 12 is provided on the layer 4. An anode electrode 10 which has electrical contact with the layer 12 is formed on an insulation film 9 between a pair of partioning grooves 14 and a pair of auxiliary electrodes 15 are fomed over the layers 8 and 9 outside the pair of the grooves 14. As a positive voltage V2 is applied to the electrodes 15 when the laser emits a light, a reverse bias nis applied between the layer 7 and the layer 4 and between the layer 7 and the layer 12 so that a leakage current which flows through the layers 12, 4 and 7 is almost eliminated. |
| 公开日期 | 1986-09-24 |
| 申请日期 | 1985-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80406]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | HANEDA MAKOTO. Semiconductor laser element. JP1986214591A. 1986-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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