Semiconductor laser device
文献类型：专利
| 作者 | KURODA, TAKAO; KAJIMURA, TAKASHI; KASHIWADA, YASUTOSHI; CHINONE, NAOKI; AIKI, KUNIO; UMEDA, JUN-ICHI |
| 发表日期 | 1982-09-01 |
| 专利号 | EP0057919A3 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device has at least a semiconductor active layer (12), two semiconductor clad layers (11) which sandwich the active layer and have a wider band gap and a lower refractive index than the active layer (12), an optical resonator, and carrier injection means. At least the active layer (12) has an angle of inclination (θ) relative to an axis which is perpendicular to optically flat faces (13) constituting said optical resonator. The inclination angle θ (rad) should most preferably lie in a range of:where θ2 denotes the reflection angle, θc the critical angle, W one-half of the waveguide thickness, and the cavity length. The laser device is effective for preventing the laser facets from breaking down, and can produce high power. |
| 公开日期 | 1982-09-01 |
| 申请日期 | 1982-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80419]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | KURODA, TAKAO,KAJIMURA, TAKASHI,KASHIWADA, YASUTOSHI,et al. Semiconductor laser device. EP0057919A3. 1982-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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