Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | ITOU TATSUYA |
| 发表日期 | 1986-01-13 |
| 专利号 | JP1986006886A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To improve reproducibility and yield by forming a current constriction layer with a striped window into a clad layer shaped onto a region in which beams are mainly confined. CONSTITUTION:A diffraction grating surface 2 at a fixed pitch having wavelength selectivity, an N-InGaAsP optical waveguide layer 4, an InGaAsP active layer 5, a P-InP clad layer 6 and a P-InP cap layer 8 are grown onto an N-InP substrate 2 in an epitaxial manner, and structure in which N-InGaAsp current constriction layers 7 to which striped windows are bored are buried at approximately the center of the clad layer 6 is formed. Accordingly, injection currents concentrate to stripes and flow because they are blocked by the current constriction layer, gain waveguide is conducted while beams are confined owing to an effective refractive-index difference generated by the presence of the current constriction layer, and a change into a single mode and the control of a transverse mode are enabled by properly setting the width of stripes. |
| 公开日期 | 1986-01-13 |
| 申请日期 | 1984-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80421]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | ITOU TATSUYA. Distributed feedback type semiconductor laser. JP1986006886A. 1986-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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