Semiconductor laser device
文献类型：专利
| 作者 | MISHIMA TOMOYOSHI; MORIOKA MAKOTO; KASAI JUNICHI; SHIRAKI YASUHIRO; KATAYAMA YOSHIFUMI; SAWADA YASUSHI |
| 发表日期 | 1987-01-08 |
| 专利号 | JP1987002581A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the threshold current and improve the differential quantum efficiency by deciding the well width constituting a quantum well or the barrier- well energy difference so that the uppermost end of the quantum levels in the well does not match the energy level of the barrier layer. CONSTITUTION:On an N GaAs substrate 1, an N GaAs buffer layer 2, an N Al0.5Ga0.5As cladding layer 3, undoped multiple quantum well layers [Al0.3 Ga0.7As 4a in five layers, GaAs 4b in four layers] 4, a P Al0.5Ga0.5As cladding layer 5 and a P Gaas layer 6 are sequentially grown using the molecular beam epitaxy process. And a stripe electrode 7 and a back electrode 8 are formed on this wafer by vacuum deposition, and the well width is made, for instance, 74Angstrom . Since the well width is decided in such a manner that the uppermost end of the quantum levels in the well does not match the energy level of the barrier layer, the energy levels of the electrons and positive holes to be formed in the quantum well deviate from the height of the barrier layer, by which the charging into the quantum well is promoted. With this, the threshold current is reduced, and the quantum efficiency is improved. |
| 公开日期 | 1987-01-08 |
| 申请日期 | 1985-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80433]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MISHIMA TOMOYOSHI,MORIOKA MAKOTO,KASAI JUNICHI,et al. Semiconductor laser device. JP1987002581A. 1987-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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