Semiconductor laser device
文献类型：专利
| 作者 | YAMAWAKI TAKESHI |
| 发表日期 | 1989-03-28 |
| 专利号 | JP1989082592A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To avoid protuberance of fusing material around a semiconductor laser chip, and prevent scattering of output light, by forming the area of a mounting surface of a heat sink in contact with a semiconductor laser chip, in an islandshape smaller than the contact surface of the semiconductor laser chip. CONSTITUTION:The mounting surface 6 of a heat sink 2 is formed so as to be higher than the other surface, i.e., it is formed in a protruding island-shape, and its area is made a little smaller than the contact surface of a chip In a semiconductor laser device constituted in such a manner, the chip 1 is bonded on the mounting surface 6 of the heat sink 2 coated with fusing material 3, and the temperature is raised. At this time, since a suitable load is applied to the chip 1, the melted fusing material oozes out from the gap between the chip 1 and the mounting surface 6. The fusing material 3 oozed out from the periphery of the chip 1 extends along a step difference on the periphery of the mounting surface 6, and is bonded without protruding around the chip Therefore, the electric short circuit is not induced. |
| 公开日期 | 1989-03-28 |
| 申请日期 | 1987-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80439]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAMAWAKI TAKESHI. Semiconductor laser device. JP1989082592A. 1989-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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