Semiconductor device
文献类型：专利
| 作者 | FUJITA SHIGEO; FUJITA SHIZUO; IMAIZUMI MASAYUKI; MORISHITA YOSHITAKA; OTSUKA KENICHI |
| 发表日期 | 1992-01-14 |
| 专利号 | JP1992010669A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obtain a semiconductor device which emits light in a blue color at high efficiency and with good visibility by using a specific semiconductor which is lattice-matched with a substrate. CONSTITUTION:A ZnCdSSe-based mixed-crystal semiconductor epitaxial layer 24 constituted of ZnS, ZnSe, CdS and CdSe which can be easily lattice-matched to a substrate is laminated on a III-V compound semiconductor single-crystal substrate When an n-type ZnSdSse epitaxial layer 21 and a p-type ZnCdSSe epitaxial layer 23 are composed of, e.g. Zn0.4Cd0.6S and a ZnCdSSe lightemitting layer 22 is composed of Zn0.8Cd0.2S0.4Se0.6, the epitaxial layers are lattice-matched with the GaAs single-crystal substrate; the forbidden band width of the n-type ZnCdSSe epitaxial layer 21 and the p-type ZnCdSSe epitaxial layer 23 is at about 2.9eV and that of the ZnCdSSe light-emitting layer 22 is at about 2.6eV. When a voltage is applied across electrodes 31 and 32 in such a way that the electrode 31 on the substrate side is negative, carriers are injected into a light- emitting region with good efficiency, and light is emitted with high efficiency by the recombination of electrons with holes. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1990-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80451]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJITA SHIGEO,FUJITA SHIZUO,IMAIZUMI MASAYUKI,et al. Semiconductor device. JP1992010669A. 1992-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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