Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; HASHIMOTO AKIHIRO; WATANABE NOZOMI |
| 发表日期 | 1989-04-18 |
| 专利号 | JP1989099274A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To easily disorder a predetermined region of a superlattice photoconductive layer by scanning a thin impurity film with a laser beam, and diffusing the impurity of the thin film into the photoconductive layer under the thin film. CONSTITUTION:A buffer layer 13, a clad layer 15, an undoped multiplex quantum well active layer 17, a photoconductive layer 19, a superlattice photoconductive layer 21 and a thin film 41 containing an impurity are sequentially formed on a substrate 1 Then, this laminate is placed in a predetermined gas atmosphere, and a region except that corresponding to a semiconductor laser resonator of the film 41 containing the impurity is scanned with a laser beam in the atmosphere. The impurity in the film 41 is diffused by scanning in the predetermined region of the layer 21, and this region is disordered. Thereafter, after the film 41 is removed, a clad layer 29 and a cap layer 31 on the layer 21 are formed. |
| 公开日期 | 1989-04-18 |
| 申请日期 | 1987-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80457]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,HASHIMOTO AKIHIRO,WATANABE NOZOMI. Manufacture of semiconductor laser. JP1989099274A. 1989-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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