Semiconductor laser device
文献类型：专利
| 作者 | OKUDA MASAHIRO |
| 发表日期 | 1989-08-14 |
| 专利号 | JP1989201977A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To shift the phase of light propagating within laser in reference to diffraction grid and to simplify adjustment of amount of phase shift by bending stripe structure which forms laser. CONSTITUTION:After coating the entire surface of an n-type InP substrate 1 with resist, primary diffraction grid pattern is marked using HeCd laser beam, chemical etching is performed, and then a diffraction grid 5 is formed. An n-InGaAsP layer 2, an InGaAsP active layer 3, and then an InGaAsP buffer layer 4 are lamination-formed on this substrate 1 in sequence. Then, after performing patterning using a mask of bent pattern, mesa etching is performed to obtain a stripe with bent part at the center. Then, an InP layer 11 is allowed to grow again and an InGaAsP layer 6 is laminated on it. Then, an SiO2 layer 7 with a window is built up and a diffusion region 10 is formed by diffusing Zn so that it reaches the InP layer 1 After that, electrodes 8 and 9 are deposited, is turned into alloy, is divided into chips by cleavage, and SiN is built up on the cleavage surface. It allows a phase shift type DFB laser to be produced easily without using a complex resist coating process. |
| 公开日期 | 1989-08-14 |
| 申请日期 | 1988-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80463]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | OKUDA MASAHIRO. Semiconductor laser device. JP1989201977A. 1989-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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