Manufacture of semiconductor laser
文献类型：专利
| 作者 | ISHIGURO NAGATAKA; IKUTA AKIHISA |
| 发表日期 | 1989-12-20 |
| 专利号 | JP1989315179A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve reliability of a buried heterostripe construction semiconductor laser by making a strip-shaped insulated layer having the prescribed width on a double heterojunction wafer for obtaining a strip-mesa shape by melting- back while using this wafer as it is for epitaxial growth. CONSTITUTION:An n-type InP buffer layer 2, an undoped InGaAsP active layer 3, a p-type InP clad layer 4 and a p-type InGaAsP layer 7 to facilitate ohmic contact are made to grow on an n-type InP substrate 1 having a (100) crystal face as the surface. On the wafer, oxide silicon is formed in a stripe shape along the crystal direction. The part excepting the SiO2 film formation part is melted back by using this wafer to obtain the strip-shaped mesa shape followed by epitaxial growth in order of a p-type InP buried layer 51 and an n-type InP current block layer 52. Thereby, a buried type semiconductor laser having excellent reliability can be manufactured. |
| 公开日期 | 1989-12-20 |
| 申请日期 | 1988-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80466]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHIGURO NAGATAKA,IKUTA AKIHISA. Manufacture of semiconductor laser. JP1989315179A. 1989-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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