Semiconductor laser
文献类型：专利
| 作者 | MUTO YUHEI; KURONAGA KOUICHI |
| 发表日期 | 1987-12-17 |
| 专利号 | JP1987291083A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain semiconductor lasers having larger light output as well as higher reliability by providing a guide layer where its Al composition ratio is larger than that of an active layer and is smaller than that of a clad layer. CONSTITUTION:The following layers are formed on sequence on a Cr dope GaAs substrate 11 of surface bearing (100) and such layers include; an n-Ga.55Al.45 As first clad layer 12 of 0mum thickness, an n-Ga.88Al.12 As active layer 13 of 0.1mum thickness, an n-Ga.65Al.35As light guide layer 30 of 0.5mum thickness, an n-Ga.88 Al.12As active layer 15 of 0.1mum thickness, an n-Ga.55 Al.45 As second clad layer 16 of 5mum thickness, an n-GaAs contact layer 17 of 2mum thickness. Semiconductor lasers that are formed under these circumstances develop oscillation threshold currents of less then 30mA as well as fundamental mode oscillations of output 40mW (in a case of continuous oscillation). Even through the active layers are composed of double layers, a far-field pattern of them is unimodal as contrasted with active layers both in the parallel and vertical directions. |
| 公开日期 | 1987-12-17 |
| 申请日期 | 1986-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MUTO YUHEI,KURONAGA KOUICHI. Semiconductor laser. JP1987291083A. 1987-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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