Crystal growth method
文献类型：专利
| 作者 | GOTO YUKIO |
| 发表日期 | 1988-08-17 |
| 专利号 | JP1988198320A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Crystal growth method |
| 英文摘要 | PURPOSE:To obtain a semiconductor device of high quality by growing a gettering layer which contains metal of high activity for removing impurity on a substrate or a buffer layer before a crystal layer is grown, thereby removing the impurity in a reaction tube. CONSTITUTION:A GaAs first buffer layer 2 is grown on a GaAs substrate 1, and an AlGaAs gettering layer 3 is grown thereon. Since trimethyl aluminum or sole aluminum of a material has high activity, it reacts with an impurity, such as oxygen or moisture during growing to introduce the impurity into the layer 3 and to reduce the residual impurity in the tube due to the exhaustion thereof out of the tube. Then, in order to improve its crystallinity, a GaAs second buffer layer 4 is grown on the layer 3, an AlGaInP first clad layer 5, a GaInP active layer 6, an AlGaInP second layer 7 and a GaAs contact layer 8 are sequentially grown thereon, thereby realizing an AlGaInP double hetero structure having good crystallinity. Thus, a semiconductor device of high quality having no residual impurity and the manufacture thereof can be obtained. |
| 公开日期 | 1988-08-17 |
| 申请日期 | 1987-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80472]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | GOTO YUKIO. Crystal growth method. JP1988198320A. 1988-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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