Semiconductor light emitting device
文献类型：专利
| 作者 | MAKIUCHI MASAO; FURUYA AKIRA |
| 发表日期 | 1988-06-29 |
| 专利号 | JP1988156384A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To decrease relaxation vibration and stray capacitance and to make it possible to perform high speed modulation, by generating a large amount of electron-hole pairs by avalanche breakdown, guiding the electrons and the holes into a resonator having a light guide structure by diffusion, and emitting light by the recombination of the electrons and the holes. CONSTITUTION:In a semiconductor light emitting device, avalanche breakdown cccurs in an avalanche region (a), and electrons and holes are generated. They are injected into a light emitting region (c) through a graded band gap region (b). The region (c) has a light guide structure. Light is emitted by the recombination by using a transition semiconductor. The manufacturing process of this laser is as follows. At first, an HR-AlGaAs clad layer 6 and a light emitting layer 5 having a MQW structure are sequentially grown on an Si-GaAs substrate 7. Then an Si is introduced a disordered region 5D. An AlGaAs layer 4 as a graded band gap layer, a GaAs layer 3 as an avalanche layer, an AlGaAs layer 2 as a clad layer and an n-GaAs layer 1 as a cap layer are sequentially grown. Then, Si is diffused, and an n-type region 9 is formed. Thereafter Zn is diffused to form a p-type region 8. Finally a p-type electrode 10 and an n-type electrode 11 are formed on the p-type region 8 and the n-type region 9. |
| 公开日期 | 1988-06-29 |
| 申请日期 | 1986-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80475]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MAKIUCHI MASAO,FURUYA AKIRA. Semiconductor light emitting device. JP1988156384A. 1988-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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