Semiconductor optical element
文献类型:专利
作者 | TOKUDA YASUKI; TSUKADA NORIAKI |
发表日期 | 1990-03-28 |
专利号 | JP1990087692A |
著作权人 | MITSUBISHI ELECTRIC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor optical element |
英文摘要 | PURPOSE:To change an effective refraction factor and internal loss and to enable change of oscillation wavelength and oscillation position by forming a plurality of gain waveguide paths close to each other and by changing a current to supply to each electrode. CONSTITUTION:An example of distribution feedback gain waveguide laser having three stripe electrodes is taken. Currents supplied to the three electrodes 1 are named I1, I2, and I3, respectively. Since these upper electrodes 1 are formed close to each other and the waveguide path is a gain waveguide type, a current I2 is injected to a middle electrode 1 at first for laser oscillation. An effective waveguide path width can be changed by injecting a current to electrodes I1 and I3 on the right and the left of the middle electrode I. Therefore, oscillation wavelength can be changed by thus changing an effective refraction factor and an oscillator loss. A light emission position can be made under the electrode I2 by letting I1=I3 and can be deflected right and left from the center by changing the size of I1 and I3. |
公开日期 | 1990-03-28 |
申请日期 | 1988-09-26 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/80483] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | TOKUDA YASUKI,TSUKADA NORIAKI. Semiconductor optical element. JP1990087692A. 1990-03-28. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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