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文献类型：专利
| 作者 | ENDO KENJI |
| 发表日期 | 1993-11-22 |
| 专利号 | JP1993082757B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a laser array of low noise with high output by forming two or more semiconductor lasers which can be independently driven at an interval of special range on the same semiconductor substrate, and laminating and coating the first dielectric thin film, a metal thin film, the second dielectric thin film on at least one light output emitting side resonator surface. CONSTITUTION:A semiconductor laser array body 1 is composed of an N type GaAs substrate, AlGaAs multilayer thin film grown on the substrate, and P- and N- side electrodes, divided into two lasers which include active layers 2, 3, and approached through a groove 12 within 100mum. Thus, one end of the two lasers is used as the common emitting side resonator surface 4 and the other end is used as common back side resonator surface 5. With this construction, an SiO2 film 6 is coated on the surface 4, a thin Au film 7 is interposed on the film 6 including the layer 3, and an SiO2 film 8 is coated on the film 6. An SiO2 film 9, a thin Au film 10, and an SiO2 film 11 are laminated and coated over the entire surface of the resonator 5. |
| 公开日期 | 1993-11-22 |
| 申请日期 | 1984-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80491]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | ENDO KENJI. -. JP1993082757B2. 1993-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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