Semiconductor laser
文献类型：专利
| 作者 | KOJIMA KEISUKE; NODA SUSUMU; MITSUNAGA KAZUMASA; HISAMA KAZUO; FUJIWARA KENZO |
| 发表日期 | 1987-06-20 |
| 专利号 | JP1987137893A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enhance the coupling efficiency and to reduce the threshold current by providing a barrier layer, which is within a specific value in film thickness and has a band gap larger than those of the guide layer, wherein a diffraction grating is carved, and of the active layer, between the above guide layer and active layer. CONSTITUTION:Layers ranging from an N-type GaAs buffer layer 2 to a P-type AlGaAs guide layer 6 are grown on a substrate 1 by a liquid phase growth method (LPE method), a diffraction grating 9 is carved in the P-type AlGaAs guide layer 6, and a P-type AlGaAs clad layer 7 and a P-type GaAs contact layer 8 are grown thereon by an LPE method. In this semiconductor laser, electrons and holes are respectively injected in an active layer 4 through an N-type electrode 10 and a P-type electrode 11, are recombined to emit lights and the lights only of a specific wavelength are selectively reflected to reach a laser oscillation. Here, a barrier layer 20 having a larger band gap is held between the active layer 4 and the guide layer 6 to prevent the overflow of electrons 12. Moreover, in order to make larger the coupling constant and prevent the tunneling of the electrons by setting the film thickness of the barrier layer 20 to 500Angstrom or less, said film thickness must be 50Angstrom or more. |
| 公开日期 | 1987-06-20 |
| 申请日期 | 1985-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80497]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,NODA SUSUMU,MITSUNAGA KAZUMASA,et al. Semiconductor laser. JP1987137893A. 1987-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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