Semiconductor device
文献类型：专利
| 作者 | KUMAI TSUGIO |
| 发表日期 | 1984-12-03 |
| 专利号 | JP1984213191A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To enable the integration of functions of a photo modulator by a method wherein the electrode controlling the following current is arranged on the route for the current between the active region and the electrode of a semiconductor light emitting element. CONSTITUTION:One electrode of a laser, e.g., the P-side electrode is represented by the numeral 31, and the N-side electrodes by the numerals 32 and 33. Control electrodes 37 and 38 are provided on the route for the current reaching said electrodes 32 and 33, respectively. Thereby, the action of field effect transistor is performed for each, thus enabling to construct the photo modulator by means of this semiconductor device. |
| 公开日期 | 1984-12-03 |
| 申请日期 | 1983-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80499]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | KUMAI TSUGIO. Semiconductor device. JP1984213191A. 1984-12-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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