Semiconductor laser device
文献类型：专利
| 作者 | SHIKADA MINORU; EMURA KATSUMI |
| 发表日期 | 1985-01-16 |
| 专利号 | JP1985007790A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain high coherency with keeping single axial mode by composing the device of the semiconductor laser element comprising an oscillation frequency selecting element composed of a distributed reflection region formed in the semiconductor crystal by a diffraction grating and a reflection mirror which reflects the output beam from the laser element so as to return the element to the active layer. CONSTITUTION:A diffraction grating 3 having a wave length of 3,800Angstrom is formed on a surface of the N type InP substrate 2, further on which an N type InGaAsP light guide layer 4, an InGaAsP active layer 5 and a P type InP clad layer 6 are laminated to be grown by liquid phase epitaxial growth. Next, a stripe part 7 in which Zn is diffused is arranged in the center of the layer 6, on both sides of which the first electrode 14 is spread and the second electrode 15 is spread over the back surface of the substrate 2. Thus, a voltage is applied to the electrodes 14 and 15 to generate laser beam. At this time, the backward output beam 8 is made into parallel beams 10 by use of a lens 9, after which the beams are reflected by a reflection mirror 11 attached to a piezoelectric element 13 to generate forward output beam 12 of a narrow spectrum width. |
| 公开日期 | 1985-01-16 |
| 申请日期 | 1983-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | SHIKADA MINORU,EMURA KATSUMI. Semiconductor laser device. JP1985007790A. 1985-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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