Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YURI MASAAKI; OTA KAZUNARI |
| 发表日期 | 1991-01-21 |
| 专利号 | JP1991012981A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to form an optical wave guide passage in window structure based on a single process of crystal growth by allowing a third guide layer in a region which exceeds the upper surface of projected part to be continuous with first and second guide layers and active layers on the upper surface of the projected part. CONSTITUTION:A projected part having a reverse mesa surface is formed on an upper surface (100) of an n type GaAs substrate After the projected part is formed, it is arranged that an n type Al0.5Ga0.5As clad layer 2, a first guide layer 3 of Al0.2, Ga0.5As, a GaAs active layer 4, a second guide layer 5 of Al0.2Ga0.5As, a p type Al0.5As clad layer 6, a third guide layer 7 of Al0.2, Ga0.8As, an n type Al0.5Ga0.5As clad layer 8, and an n type GaAs cap layer 9 show a consecuting growth. The third guide layer 7 which excludes the projected upper surface is adapted to be continuous with the first and second guide layers 3 and 5 on the projected part and the active layer 4. This construction makes it possible to form an optical guide passage in window structure based on a single growth process. |
| 公开日期 | 1991-01-21 |
| 申请日期 | 1989-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80536]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YURI MASAAKI,OTA KAZUNARI. Manufacture of semiconductor laser device. JP1991012981A. 1991-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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