Buried type semiconductor laser
文献类型：专利
| 作者 | MITO IKUO |
| 发表日期 | 1983-06-30 |
| 专利号 | JP1983110085A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To enhance the differential quantum efficiency and the photo output for the titled semiconductor laser by a method wherein a current block layer, which constitutes the buried type semiconductor laser, is provided on two stripe- formed parallel grooves, thereby enabling to effectively confine the current to be flowed in the active layer located between th two grooves formed on an active layer as well as to oscillate at a low flow in current. CONSTITUTION:On the N type InP substrate 1 of a surface (001), an N type InP buffer layer 2, a non-doped InGaAsP active layer 3, and a P type InP clad layer 4 are laminated and epitaxially grown in liquid-phase, and two parallel grooves 30 and 31 are bored in the direction by performing a photolithographic method. Then, a P type InP block layer 5 is grown on the whole surface while said grooves are being buried, and an N type InP confinement layer 6, a P type InP buried layer 7, and a P type InGaAsP cap layer 8 are formed by lamination on the layer 5 excluding the mesa stripe region 10 located between the grooves 30 and 3 Subsequently, a P-side electrode 20 is coated on the layer 8, and an N-side electrode 21 is coated on the back side of the substrate 1 respectively. |
| 公开日期 | 1983-06-30 |
| 申请日期 | 1981-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80542]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | MITO IKUO. Buried type semiconductor laser. JP1983110085A. 1983-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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