Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | TAKAHASHI YASUHITO; OGURA MOTOTSUGU |
| 发表日期 | 1990-07-19 |
| 专利号 | JP1990185086A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To increase a doping amount and to prevent influence on an active layer and an increase in the resistance of a clad layer by forming a second clad layer in a double hetero structure into a multilayer film with single dopant element doped with the same composition and different energy gaps. CONSTITUTION:In a double heterostructure having at least a first clad layer 3, an active layer 4 and a second clad layer on a semiconductor substrate 1, second clad layers 5, 6 made of multilayer films doped with sole dopant element with the same composition and different energy gaps or second clad layers 5, 6 doped with single dopant with different compositions and different energy gaps are formed. Thus, the doping amount can be increased as compared with the clad layer of sole energy gap to prevent influence to the active layer 4 and an increase in the resistances of the clad layers 4, 5. |
| 公开日期 | 1990-07-19 |
| 申请日期 | 1989-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80552]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKAHASHI YASUHITO,OGURA MOTOTSUGU. Semiconductor laser device and manufacture thereof. JP1990185086A. 1990-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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