Semiconductor laser device and method for producing the same
文献类型：专利
| 作者 | CHINO, TOYOJI |
| 发表日期 | 2004-01-06 |
| 专利号 | US6674779 |
| 著作权人 | GODO KAISHA IP BRIDGE 1 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for producing the same |
| 英文摘要 | A semiconductor laser device includes a substrate, a light emission region provided on the substrate, and an alignment stripe provided on the substrate so as to be adjacent to the light emission region. The light emission region includes a first active layer stripe having a layered structure including a first waveguide layer, an active layer, and a second waveguide layer, a first buried layer formed so as to cover side faces of the active layer stripe, a second buried layer formed on the first buried layer, and a third buried layer formed on the second buried layer and the active layer stripe. The alignment stripe includes a second active layer stripe having a layered structure including the first waveguide layer, the active layer, and the second waveguide layer, and a selective growth mask formed on the second active layer stripe and formed of a material on which the first buried layer, the second buried layer and the third buried layer are incapable of growing. |
| 公开日期 | 2004-01-06 |
| 申请日期 | 2001-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80553]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GODO KAISHA IP BRIDGE 1 |
| 推荐引用方式 GB/T 7714 | CHINO, TOYOJI. Semiconductor laser device and method for producing the same. US6674779. 2004-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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