Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HAMADA TAKESHI |
| 发表日期 | 1991-01-24 |
| 专利号 | JP1991016291A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To acquire a uniform film thickness all over a wafer by narrowing a ridge at a part of a fast growth speed on a substrate and by widening a ridge at a part of a slow growth speed. CONSTITUTION:An N-type GaAs blocking layer 2 is formed on a P-type GaAs substrate 1 having a mesa, and two ridges are formed thereon through etching. A ridge at a part of a fast growth speed on the substrate 1 is made narrow and a ridge at a part of a slow growth speed is made wide. A laser structure of double hetero including an active layer is formed on the ridge through liquid phase epitaxial method. The wider ridge is set to a side B which comes into contact with solution first, and the narrower ridge is set to a side A which comes into contact with solution later. Thereby, it is possible to offset difference of growth speed due to difference of solution conditions, by difference of ridge width. A uniform growth film thickness can be acquired all over in this way. |
| 公开日期 | 1991-01-24 |
| 申请日期 | 1989-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80564]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA TAKESHI. Manufacture of semiconductor laser device. JP1991016291A. 1991-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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