Semiconductor laser element
文献类型：专利
| 作者 | OTSUKA NAOTAKA; UEDA SADAAKI |
| 发表日期 | 1986-04-12 |
| 专利号 | JP1986071690A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent the variation in light emitting position even when either of a P type layer or an N type layer is die-bonded to the stem side, by a method wherein a light emitting layer is provided within the range of a specific distance from the center position in the chip thickness direction. CONSTITUTION:An N-GaAs current stricture layer 12, a P-GaAlAs clad layer 13, a P-GaAlAs active layer 14, an N-GaAlAs layer 15, and an N-GaAs cap layer 16 are laminated on a P-GaAs substrate 1 In this case, when the active layer 14 is located within + or -25mum from the element center by thickening the GaAs cap layer 16 and thinning the GaAs substrate 11, the light emitting position does not vary even in the die-bond of either of the P type layer (P-GaAs substrate) 11 or the N type layer (N-GaAs layer) 16. |
| 公开日期 | 1986-04-12 |
| 申请日期 | 1984-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80574]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | OTSUKA NAOTAKA,UEDA SADAAKI. Semiconductor laser element. JP1986071690A. 1986-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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