Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HASEGAWA MITSUTOSHI; HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI |
| 发表日期 | 1987-11-21 |
| 专利号 | JP1987269380A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To accurately form an array laser emitting a plurality of beams in the different directions by making a resonator face nearly perpendicular to a semiconductor growth layer plane and etching up to positions deeper than a laser active layer. CONSTITUTION:After making N-type GaAs 32, N-type AlGaAs 5, non-doping GaAs 34, P-type AlGaAs 35, P-type GaAs 36 grow on the wafer of GaAs substrate 31 according to a molecular beam epitaxy system, a Si3N4 plasma CVD film is extensively coated. Portions of 23a-23c are removed by etching according to a photolithography process and are covered by a laminated electrode 37 of Cr and Au. In addition, the electrode 37 separates portions 24a-24c by the photolithography process so as to drive the portions 23a-23c independently. While, after forming the laminated electrode 38 of AuGe and Au at the rear side of the substrate 31, portions of cavity faces 25a-25c are processed by reactive ion beam etching, resulting in the formation of the cavity faces. |
| 公开日期 | 1987-11-21 |
| 申请日期 | 1986-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80577]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI,HARA TOSHITAMI,NOJIRI HIDEAKI,et al. Manufacture of semiconductor laser device. JP1987269380A. 1987-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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