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文献类型：专利
| 作者 | MATSUDA OSAMU; MORI YOSHIFUMI; MORISANE KENJI; AYABE MASAAKI |
| 发表日期 | 1988-05-25 |
| 专利号 | JP1988025517B2 |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To intensify the light output as well as decrease the spreading angle of a radiated beam, by permitting the oscillation in a single mode, by providing a plurality of active layers with a necessary distance relationship thereamong, and by making the position of the maximum light intensify exist in the region having a large energy gap width outside the active layers. CONSTITUTION:Epitaxially grown on a semi-insulative or n type GaAs substrate 11 in a laminating manner are an n type Al0.35Ga0.65As clad layer 12 having an energy gap width larger than those of active layers 13 and 15, the n type GaAs active layer 13 having an energy gap width smaller than this, an n type Al0.2Ga0.8As cavity layer 14 having an energy gap width larger than that, the n type active layer 15 the same as the layer 13, an n type cavity layer 16 the same as the layer 14, and an n type GaAs cap layer 17. Then, carrier injection regions (a) and (b) are provided in the parts of the first and second active layers 13 and 15 where a p-n junction J crosses. In this case, the distance between the regions (a) and (b) is specified so that the rays of light emitted when a forward voltage is applied between electrodes 20 and 21 interfere with each other to become maximum as C marked with X. |
| 公开日期 | 1988-05-25 |
| 申请日期 | 1980-07-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80582]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | MATSUDA OSAMU,MORI YOSHIFUMI,MORISANE KENJI,et al. -. JP1988025517B2. 1988-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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